Charge trapping gate stack enabled non-recessed normally off AlGaN/GaN HEMT with high threshold voltage stability

This paper reports a non-recessed normally off AlGaN/GaN high-electron-mobility transistor (HEMT) with a charge trapping gate dielectric stack. The charge trapping gate dielectric stack featuring a low density of fixed positive charges consists of an O3-based Al2O3 tunneling layer and an O3-based HfO2 blocking layer, both deposited via atomic layer deposition. For HEMT with a 15 nm AlGaN barrier layer, a threshold voltage of 2.57 V and an on-resistance of 8.50 Ω × mm are achieved. For positive bias temperature instability (PBTI) testing, the electric field provided by the 15 nm AlGaN layer serves as a barrier to channel carriers, significantly enhancing the PBTI test stability. The optimized gate dielectric stack enables the fabrication of the non-recessed normally off metal–insulator–semiconductor-HEMT with enhanced threshold voltage (Vth) stability.

Authors

Institutions

Publication Details

Journal
Applied Physics Letters
Published
2024-09-30
DOI
https://doi.org/10.1063/5.0230096
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Charge trapping gate stack enabled non-recessed normally off AlGaN/GaN HEMT with high threshold voltage stability

Chuying Tang, Peiran Wang, Qiaoyu Hu, Fangzhou Du et al.
Applied Physics Letters
GaN-based semiconductor devices and materials
article

Charge trapping gate stack enabled non-recessed normally off AlGaN/GaN HEMT with high threshold voltage stability

Chuying Tang, Peiran Wang, Qiaoyu Hu, Fangzhou Du, H.Y. Yu, Chenkai Deng, Kangyao Wen, Wenmao Li, Jiaqi He, Yu-Long Jiang, Yang Jiang, Qing Wang, Yuhan Sun
article en

Abstract

This paper reports a non-recessed normally off AlGaN/GaN high-electron-mobility transistor (HEMT) with a charge trapping gate dielectric stack. The charge trapping gate dielectric stack featuring a low density of fixed positive charges consists of an O3-based Al2O3 tunneling layer and an O3-based HfO2 blocking layer, both deposited via atomic layer deposition. For HEMT with a 15 nm AlGaN barrier layer, a threshold voltage of 2.57 V and an on-resistance of 8.50 Ω × mm are achieved. For positive bias temperature instability (PBTI) testing, the electric field provided by the 15 nm AlGaN layer serves as a barrier to channel carriers, significantly enhancing the PBTI test stability. The optimized gate dielectric stack enables the fabrication of the non-recessed normally off metal–insulator–semiconductor-HEMT with enhanced threshold voltage (Vth) stability.

Applied Physics LettersVol. 125(14)
Fudan University (CN), Southern University of Science and Technology (CN), State Key Laboratory of ASIC and System
Natural Science Foundation of Shenzhen City, Shenzhen Government, Guangdong Science and Technology Department, National Natural Science Foundation of China-China Academy of General Technology Joint Fund for Basic Research
Affordable and clean energy
Openalex Percentile: Top 90%
GaN-based semiconductor devices and materials
DOISourceOpenAlex
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.