Slope Efficiency and Voltage Reduction at High Current Densities in AlInGaAs Diode Lasers
The slope efficiency and drive voltage of broad area AlInGaAs laser diodes near 865 nm is observed to decrease significantly under quasi-CW pulsed operation at currents well above threshold, in a manner that cannot be explained by thermal effects or carrier leakage over heterojunction barriers. Simulations show that the slope efficiency reduction is explicable by increased free carrier absorption in the waveguide region. Empirical formulas are presented to represent these effects in a closed analytic form suitable for use in simulators for diode-pumped laser systems.
Authors
- P. Thiagarajan (ORCID: https://orcid.org/0000-0002-2425-4860)
- Matthew C. Boisselle (ORCID: https://orcid.org/0000-0001-8737-7983)
- R. J. Deri (ORCID: https://orcid.org/0000-0002-3446-1484)
- D.M. Dutra
- L. Peter Martin (ORCID: https://orcid.org/0000-0002-1087-4698)
- William E. Fenwick
- David L. Pope
- G. T. Thaler
- Jiang Li (ORCID: https://orcid.org/0000-0002-4541-4886)
- M. T. Crowley (ORCID: https://orcid.org/0009-0006-8641-2461)
Institutions
- Lawrence Livermore National Laboratory (US)
Publication Details
- Journal
- IEEE Journal of Selected Topics in Quantum Electronics
- Published
- 2024-10-02
- DOI
- https://doi.org/10.1109/jstqe.2024.3472458
- Citations
- 3
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 1.01