Heterogeneous integration of telecom c-band emitting quantum dots on silicon photonics platform by adhesive bonding

Silicon photonics for telecommunication applications has garnered much attention recently. The optical transparency and the large refractive index contrast of silicon in the telecommunication wavelengths allow the implementation of high-density photonic integrated circuits. The drawback of silicon photonics is that there is no native efficient light source. Integration of III-V material, which offers outstanding optical emission properties, on silicon provides a potential solution. One of the approaches for large-scale integration is through heterogeneous integration of a III-V membrane using adhesive bonding. Here, we will report on the integration of telecom C-band emitting InAs QDs on a silicon platform through such bonding.