Tailoring quantum emitters

We present our work on quantum emitters in silicon nitride (SiN), hexagonal boron nitride (hBN), and aluminum nitride (AlN) for integration with quantum photonic integrated circuits (QPICs). We study properties, fabrication techniques, and photonic structures for tailoring these quantum emitters to optimal functionality within QPICs. Quantum emitters in SiN, discovered by our group, are characterized by exceptional emission brightness and single-photon purity. We have successfully integrated these emitters with SiN waveguides and developed a pathway for large-scale, site-controlled fabrication that is compatible with foundry processes. In hBN platform, we enhanced emission from spin defects through plasmonic cavities and proposed efficient coupling of these emitters to SiN waveguides via inverse design optimized couplers. We also demonstrated the creation of quantum emitters within AlN via heavy ion implantation. Our work sets the stage for the development of next-generation quantum communication, sensing, and computing devices by leveraging the tailored optimization of quantum emitters for QPICs.