Generating stable tin-vacancy centers in nanophotonic structures in diamond

Spin defects in diamond are a promising candidate for quantum information processing applications. One of those is the tin vacancy (SnV) defect in diamond. It shows an individually addressable spin, bright emission into the zero phonon line (Debye-Waller factor of 0.6) and a large ground state splitting, enabling it to work at relatively high temperatures of 2 K. So far, it has been challenging to create stable SnV centers and incorporate them into nanophotonic devices. In this work, we report on the successful generation of bulk SnVs and integration into nanophotonic structures. The implanted SnV show stable PL and PLE spectra in bulk and nanostructure.