Detecting surface plasmon using a AlGaN/GaN high electron mobility transistor

The surface of a gateless AlGaN/GaN high-electron-mobility transistor (HEMT) is very sensitive to the attachment of electric charges which can greatly affect its channel conductance. For near two decades, HEMT has been researched as a possible sensor for chemical and bio-spices. In this study, we demonstrate the ability of an AlGaN/GaN HEMT to detect surface plasmon via the plasmonic generated hot-carrier injection. A theoretical model explaining the detecting mechanism will be introduced and verified by several experimental results. We will also discuss several possible applications of HEMT devices in the field of Plasmonics.