Design and characterization of semiconductor nanowire devices

We present results on III-V semiconductor nanowires and metal halide perovskite nanowires. Focus is on optical and electrical design and characterization, especially of nanowire arrays for optoelectronic applications. Emphasis is given to the strong impact of material and geometry choice on device performance. We give examples of how electromagnetic optics modelling and drift-diffusion electrical modelling can be used to aid in both device design and analysis of characterization results.

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Publication Details

Published
2024-10-02
DOI
https://doi.org/10.1117/12.3028695
Primary Topic
Nanowire Synthesis and Applications
Type
article
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article

Design and characterization of semiconductor nanowire devices

Nicklas Anttu
Nanowire Synthesis and Applications
article

Design and characterization of semiconductor nanowire devices

Nicklas Anttu
article en

Abstract

We present results on III-V semiconductor nanowires and metal halide perovskite nanowires. Focus is on optical and electrical design and characterization, especially of nanowire arrays for optoelectronic applications. Emphasis is given to the strong impact of material and geometry choice on device performance. We give examples of how electromagnetic optics modelling and drift-diffusion electrical modelling can be used to aid in both device design and analysis of characterization results.

Åbo Akademi University (FI)
Openalex Percentile: Top 85%
Nanowire Synthesis and Applications
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Design and characterization of semiconductor nanowire devices — Nicklas Anttu · (2024) | TGRS Research Map | TGRS