Research and technology development on micro-LEDs and quantum dots for next-generation displays

Colloidal quantum dots (QDs) integrated Micro-LEDs are key technologies for next-generation displays such as AR/VR. However, fundamental scientific issues such as the low internal quantum efficiency (IQE) of Micro-LEDs and low quantum dots light conversion efficiency (LCE) remain to be resolved for the commercialization of this technology. In this talk, the impact of Micro-LED Epi and chip designs as well as GaN free-standing substrates on the improvement of IQE of Micro-LEDs will be reported. Mechanisms of proposed 0D–2D hybrid optical scatterers for improving the LCE of QDs will also be discussed.

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Publication Details

Published
2024-10-02
DOI
https://doi.org/10.1117/12.3027312
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
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article

Research and technology development on micro-LEDs and quantum dots for next-generation displays

Wengang Bi
GaN-based semiconductor devices and materials
article

Research and technology development on micro-LEDs and quantum dots for next-generation displays

Wengang Bi
article en

Abstract

Colloidal quantum dots (QDs) integrated Micro-LEDs are key technologies for next-generation displays such as AR/VR. However, fundamental scientific issues such as the low internal quantum efficiency (IQE) of Micro-LEDs and low quantum dots light conversion efficiency (LCE) remain to be resolved for the commercialization of this technology. In this talk, the impact of Micro-LED Epi and chip designs as well as GaN free-standing substrates on the improvement of IQE of Micro-LEDs will be reported. Mechanisms of proposed 0D–2D hybrid optical scatterers for improving the LCE of QDs will also be discussed.

Chinese University of Hong Kong (HK)
Industry, innovation and infrastructure
Openalex Percentile: Top 90%
GaN-based semiconductor devices and materials
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