On-chip GaN vacuum nanoelectronics

We present the fabrication and operation of GaN vacuum electron nanodiodes operating by field emission and in air. The devices exhibit low turn-on voltage, high field emission current, and excellent radiation hardness. Experimental and modeling results on the characteristics of these devices at various nanogap sizes, operating pressures, temperature, and radiation environments are discussed. Preliminary results on the fabrication and characteristics of lateral GaN nano vacuum transistors will also be shown. Sandia National Laboratories is managed and operated by NTESS under DOE NNSA contract DE-NA0003525.