Enhancement of Near‐Infrared Photovoltaic Response of Si/Au Schottky‐Junction Structure by Band‐Bending Approaches

A combined approach of band bending is employed to enhance the near‐infrared (NIR) photovoltaic (PV) response of a Si/Au Schottky junction (SHJ) device. As a reference, the basic architecture of the SHJ device consists of textured n‐Si and gold nanoparticles (Au NPs). Its photoelectric conversion efficiency at 1319 nm wavelength is 0.0302%. A series of band‐bending approaches are then applied to the reference device in sequence, aiming to minimize the electric loss of the structure by strengthening built‐in electric field. These approaches include introductions of an Al 2 O 3 layer for front field passivation, a p + ‐Si layer to form a p + n‐like junction at the front of the device and a SiO 2 layer for rear field passivation. With these modifications, under 1319 nm illumination, the open‐circuit voltage eventually increases by 14%, the short‐circuit current increases by 18% and the photoelectric conversion efficiency of the device increases by 66% to reach 0.0501%. The results of this work propose a strategy to minimize the electric loss in an NIR PV device.