Highly efficient real-time spatially resolved sensing of ultraviolet light
This work shows the realization of highly efficient real-time ultraviolet photodetectors using the high band gap semiconductor amorphous indium gallium zinc oxide (a-IGZO). The presented phototransistors are characterized at room temperature with a continuous-wave laser at 226 nm. The characterization includes the detection efficiency (responsivity R) and the response time t<sub>R</sub>. Spatially resolved measurements are enabled by the configuration of an active-matrix sensor array. Necessary switching transistors are produced simultaneously to the single-gate thin-film transistors acting as the photosensors. The functionality of the on-glass ultraviolet photosensor array is demonstrated by the determination of the beam waist of the 226nm laser.
Authors
- Harald Kübler (ORCID: https://orcid.org/0000-0001-5110-5337)
- Tilman Pfau (ORCID: https://orcid.org/0000-0003-3272-3468)
- Fabian Munkes (ORCID: https://orcid.org/0000-0002-2964-813X)
- Patrick Schalberger (ORCID: https://orcid.org/0000-0003-3735-3910)
- Yannick Schellander (ORCID: https://orcid.org/0000-0002-9790-262X)
- Alexander Trachtmann
- Norbert Fruehauf (ORCID: https://orcid.org/0009-0006-8118-8990)
- Robert Löw
Institutions
- University of Stuttgart (DE)
Publication Details
- Published
- 2024-10-02
- DOI
- https://doi.org/10.1117/12.3028038
- Primary Topic
- Infrared Target Detection Methodologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00