Selective-Area Growth of Hexagonal-to-Cubic GaN as an n-Type Metal–Oxide–Semiconductor Field-Effect Transistor Drain on a Nanogrooved Si(100) Substrate

This paper presents a novel method for growing a lateral N+-GaN/n-Si heterojunction with minimum material defects and melt-back etching on nanogrooved Si(100) substrates to create devices with a high breakdown voltage and power amplification efficiency. The core technique involves the selective-area growth of hexagonal-to-cubic (h-to-c) GaN on the nano-V-grooved (111) facets of a Si(100) substrate by using metal–organic chemical vapor deposition. The paper discusses in detail the proposed process for realizing an n-type metal–oxide–semiconductor field-effect device with a lateral GaN drain on a cost-effective Si(100) substrate.

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Publication Details

Journal
Crystal Growth & Design
Published
2024-09-30
DOI
https://doi.org/10.1021/acs.cgd.4c00683
Citations
2
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.62

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article

Selective-Area Growth of Hexagonal-to-Cubic GaN as an n-Type Metal–Oxide–Semiconductor Field-Effect Transistor Drain on a Nanogrooved Si(100) Substrate

Chien-Nan Hsiao, Edward Yi Chang, Tsai-Fu Chung, Bo-Cheng Lin et al.
2 citations
Crystal Growth & Design
GaN-based semiconductor devices and materials
0.62
article

Selective-Area Growth of Hexagonal-to-Cubic GaN as an n-Type Metal–Oxide–Semiconductor Field-Effect Transistor Drain on a Nanogrooved Si(100) Substrate

Chien-Nan Hsiao, Edward Yi Chang, Tsai-Fu Chung, Bo-Cheng Lin, Mau-Chung Frank Chang, Hsin-yi Sandy Tsai, J.H. Lin, Shuo Hwai, Hung-Ching Tsai, Jason C. S. Woo, Y. C. Hung, Cheng-Jun Huang, Shih-Meng Chen
article en
2 citations

Abstract

This paper presents a novel method for growing a lateral N+-GaN/n-Si heterojunction with minimum material defects and melt-back etching on nanogrooved Si(100) substrates to create devices with a high breakdown voltage and power amplification efficiency. The core technique involves the selective-area growth of hexagonal-to-cubic (h-to-c) GaN on the nano-V-grooved (111) facets of a Si(100) substrate by using metal–organic chemical vapor deposition. The paper discusses in detail the proposed process for realizing an n-type metal–oxide–semiconductor field-effect device with a lateral GaN drain on a cost-effective Si(100) substrate.

Crystal Growth & Design
National Yang Ming Chiao Tung University (TW), University of California, Los Angeles (US), National Institutes of Applied Research (TW)
National Science and Technology Council
Openalex Percentile: Top 33%
GaN-based semiconductor devices and materials
0.62
DOISourceOpenAlex
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Selective-Area Growth of Hexagonal-to-Cubic GaN as an n-Type Metal–Oxide–Semiconductor Field-Effect Transistor Drain on a Nanogrooved Si(100) Substrate — Chien-Nan Hsiao, Edward Yi Chang, et al. · Crystal Growth & Design (2024) | TGRS Research Map | TGRS