Improvement of thermal damage resistance of SrAl2O4:Eu2+, Dy3+ persistent phosphor by a low temperature pre-annealing and its mechanism

SrAl2O4:Eu2+, Dy3+ as an excellent persistent phosphor has been widely applied in many fields. However, the high temperature induced thermal failure has always been a bottleneck problem restricting its long-term development. In this study, a simple pre-annealing method was utilized to improve the thermal damage resistance ability of SrAl2O4:Eu2+, Dy3+ persistent phosphors. After annealing at 900 °C, the afterglow duration time of the phosphor pre-annealed at 400 °C reached 233 min, which was twice longer than that of the phosphor without pre-annealing. An extrinsic vacancy defect migration theory at an elevated temperature was proposed to explain the interesting phenomenon. This study introduced a path to enhance the thermal stability of SrAl2O4:Eu2+, Dy3+ persistent phosphors and provided a thought to design persistent luminescence materials with desired thermal stability.

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Publication Details

Journal
Applied Physics Letters
Published
2024-09-30
DOI
https://doi.org/10.1063/5.0233664
Citations
2
Primary Topic
Luminescence Properties of Advanced Materials
Type
article
Field-Weighted Citation Impact
0.23

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article

Improvement of thermal damage resistance of SrAl2O4:Eu2+, Dy3+ persistent phosphor by a low temperature pre-annealing and its mechanism

Hongsen Wang, W. Stręk, Chaofan Shi, Tianyuan Zhou et al.
2 citations
Applied Physics Letters
Luminescence Properties of Advanced Materials
0.23
article

Improvement of thermal damage resistance of SrAl2O4:Eu2+, Dy3+ persistent phosphor by a low temperature pre-annealing and its mechanism

Hongsen Wang, W. Stręk, Chaofan Shi, Tianyuan Zhou, Dongshun Chen, Hao Chen, Le Zhang, Wen Tian, Zihan Zhou, Baojin Huang, Xinyuan Zhang
article en
2 citations

Abstract

SrAl2O4:Eu2+, Dy3+ as an excellent persistent phosphor has been widely applied in many fields. However, the high temperature induced thermal failure has always been a bottleneck problem restricting its long-term development. In this study, a simple pre-annealing method was utilized to improve the thermal damage resistance ability of SrAl2O4:Eu2+, Dy3+ persistent phosphors. After annealing at 900 °C, the afterglow duration time of the phosphor pre-annealed at 400 °C reached 233 min, which was twice longer than that of the phosphor without pre-annealing. An extrinsic vacancy defect migration theory at an elevated temperature was proposed to explain the interesting phenomenon. This study introduced a path to enhance the thermal stability of SrAl2O4:Eu2+, Dy3+ persistent phosphors and provided a thought to design persistent luminescence materials with desired thermal stability.

Applied Physics LettersVol. 125(14)
Jiangsu Normal University (CN), Shandong University (CN), Suzhou University of Science and Technology (CN), Jiangnan Industry Group (China) (CN), State Key Laboratory of Crystal Materials, Polish Academy of Sciences (PL)
State Key Laboratory of Crystal Materials, National Natural Science Foundation of China, Natural Science Foundation of Jiangsu Province, Priority Academic Program Development of Jiangsu Higher Education Institutions, Jiangsu Provincial Key Research and Development Program, International Science and Technology Cooperation Program of Jiangsu Province, National Key Research and Development Program of China, Xuzhou Science and Technology Program
Openalex Percentile: Top 51%
Luminescence Properties of Advanced Materials
0.23
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