Multivariate growth analysis on D0₁₉–phase Mn₃Ga kagome–based topological antiferromagnets

The combination of antiferromagnetism and topological properties in Mn₃X (X = Sn,Ge,Ga) offers a unique platform to explore novel spin-dependent phenomena and develop innovative spintronic devices. Here, we have systematically investigated the phase transition of Mn₃Ga thin films on SiO₂(001)/Si substrates under various growth parameters such as seeding layer structure, annealing conditions, and film thickness. The relatively thick Mn₃Ga films grown with Ru seeding exhibit a variety of polycrystalline hexagonal phases, including (002), and (201). The addition of a Ta layer to the conventional Ru seeding layer promotes the formation of nearly single-crystal antiferromagnetic (AF) Mn₃Ga(002) phase from the relatively thin Mn₃Ga films after annealing at 773 K. The investigation of the growth mechanism of Mn₃Ga polycrystalline thin films provides a reference strategy for exploring Mn-based AF spintronic devices.