Cryogenically cooled periodically poled lithium niobate wafer stacks for multi-cycle terahertz pulses

We report on the generation of high-power narrow-bandwidth terahertz (THz) pulses by cryogenic cooling of hand-made periodically poled lithium niobate (PPLN) wafer stacks. As a proof-of-concept, we cool stacks with up to 48 wafers down to 97 K and achieve few-percent bandwidths at a center frequency of 0.39 THz, with pulse energy up to 0.42 mJ and average power of 21 mW. Supported by modeling, we observe effective cooling of PPLN wafer stacks that not only reduces terahertz absorption but critically maintains the micrometer-scale inter-wafer gaps for optimal terahertz transmission. Our results unlock the potential for scaling these large-area sources to greater numbers of wafers to push both the energy and bandwidth beyond current capability, opening up possibilities in areas such as terahertz-driven particle acceleration, terahertz imaging, and control over material properties.

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Publication Details

Journal
Applied Physics Letters
Published
2024-09-30
DOI
https://doi.org/10.1063/5.0230877
Citations
3
Primary Topic
Terahertz technology and applications
Type
article
Field-Weighted Citation Impact
0.63

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article

Cryogenically cooled periodically poled lithium niobate wafer stacks for multi-cycle terahertz pulses

Morgan T. Hibberd, Graeme Burt, Darren M. Graham, C. D. W. Mosley et al.
3 citations
Applied Physics Letters
Terahertz technology and applications
0.63
article

Cryogenically cooled periodically poled lithium niobate wafer stacks for multi-cycle terahertz pulses

Morgan T. Hibberd, Graeme Burt, Darren M. Graham, C. D. W. Mosley, S. P. Jamison, J. A. Fülöp, Vidushi Gupta, Jin-Yeong Son, Joseph T. Bradbury, Christopher T. Shaw, Robert Appleby, Patrick J. Dalton, János Bohus, Ashutosh Sharma, Abhishek Gupta
article en
3 citations

Abstract

We report on the generation of high-power narrow-bandwidth terahertz (THz) pulses by cryogenic cooling of hand-made periodically poled lithium niobate (PPLN) wafer stacks. As a proof-of-concept, we cool stacks with up to 48 wafers down to 97 K and achieve few-percent bandwidths at a center frequency of 0.39 THz, with pulse energy up to 0.42 mJ and average power of 21 mW. Supported by modeling, we observe effective cooling of PPLN wafer stacks that not only reduces terahertz absorption but critically maintains the micrometer-scale inter-wafer gaps for optimal terahertz transmission. Our results unlock the potential for scaling these large-area sources to greater numbers of wafers to push both the energy and bandwidth beyond current capability, opening up possibilities in areas such as terahertz-driven particle acceleration, terahertz imaging, and control over material properties.

Applied Physics LettersVol. 125(14)
Cockcroft Institute (GB), University of Manchester (GB), ELI-HU Research and Development Non-Profit (HU), Sci-Tech Daresbury (GB), Lancaster University (GB)
Science and Technology Facilities Council
Openalex Percentile: Top 31%
Terahertz technology and applications
0.63
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