A Novel Isolation Approach for GaN-Based Power Integrated Devices

This paper introduces a novel technology for the monolithic integration of GaN-based vertical and lateral devices. This approach is groundbreaking as it facilitates the drive of high-power GaN vertical switching devices through lateral GaN HEMTs with minimal losses and enhanced stability. A significant challenge in this technology is ensuring electrical isolation between the two types of devices. We propose a new isolation method designed to prevent any degradation of the lateral transistor's performance. Specifically, high voltage applied to the drain of the vertical GaN power FinFET can adversely affect the lateral GaN HEMT's performance, leading to a shift in the threshold voltage and potentially compromising device stability and driver performance. To address this issue, we introduce a highly doped n<sup>+</sup> GaN layer positioned between the epitaxial layers of the two devices. This approach is validated using the TCAD-Sentaurus simulator, demonstrating that the n<sup>+</sup> GaN layer effectively blocks the vertical electric field and prevents any depletion or enhancement of the 2D electron gas (2DEG) in the lateral GaN HEMT. To our knowledge, this represents the first publication of such an innovative isolation strategy between vertical and lateral GaN devices.

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Publication Details

Journal
Micromachines
Published
2024-09-30
DOI
https://doi.org/10.3390/mi15101223
Citations
2
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.62

Funders

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article

A Novel Isolation Approach for GaN-Based Power Integrated Devices

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2 citations
Micromachines
GaN-based semiconductor devices and materials
0.62
article

A Novel Isolation Approach for GaN-Based Power Integrated Devices

Karine Isoird, Zahraa Zaidan, Y. Cordier, Josiane Tasselli, Dominique Planson, Mohammed Benjelloun, Camille Sonneville, Frédéric Morancho, A. Soltani, Nedal Al Taradeh, Hassan Maher, Christophe Rodriguez, Luong Viet Phung
article en
2 citations

Abstract

This paper introduces a novel technology for the monolithic integration of GaN-based vertical and lateral devices. This approach is groundbreaking as it facilitates the drive of high-power GaN vertical switching devices through lateral GaN HEMTs with minimal losses and enhanced stability. A significant challenge in this technology is ensuring electrical isolation between the two types of devices. We propose a new isolation method designed to prevent any degradation of the lateral transistor's performance. Specifically, high voltage applied to the drain of the vertical GaN power FinFET can adversely affect the lateral GaN HEMT's performance, leading to a shift in the threshold voltage and potentially compromising device stability and driver performance. To address this issue, we introduce a highly doped n<sup>+</sup> GaN layer positioned between the epitaxial layers of the two devices. This approach is validated using the TCAD-Sentaurus simulator, demonstrating that the n<sup>+</sup> GaN layer effectively blocks the vertical electric field and prevents any depletion or enhancement of the 2D electron gas (2DEG) in the lateral GaN HEMT. To our knowledge, this represents the first publication of such an innovative isolation strategy between vertical and lateral GaN devices.

MicromachinesVol. 15(10)
Université Claude Bernard Lyon 1 (FR), Centre National de la Recherche Scientifique (FR), Université Toulouse III - Paul Sabatier (FR), Université de Sherbrooke (CA), Laboratoire d'Analyse et d'Architecture des Systèmes (FR), Laboratoire Ampère (FR), Institut National des Sciences Appliquées de Lyon (FR)
Agence Nationale de la Recherche, Centre National de la Recherche Scientifique, Natural Sciences and Engineering Research Council of Canada, Fonds de recherche du Québec – Nature et technologies
Affordable and clean energy
Openalex Percentile: Top 33%
GaN-based semiconductor devices and materials
0.62
DOIOpen Access PDFOpenAlex
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