OPTIMIZING THE INFLUENCE OF DOPING AND TEMPERATURE ON THE ELECTROPHYSICAL FEATURES OF P-N AND P-I-N JUNCTION STRUCTURES

In this paper, we investigate the effects of doping and temperature (at 300 K and 400 K) on the characteristics of Silicon (Si) and Gallium Arsenide (GaAs) p-n and p-i-n homojunction structures, utilizing doping concentrations of p+= n+=2∙1017 and p=n=1016 cm-3 through numerical calculation and modeling. Furthermore, we have analyzed three different cases: A) p-n, B) p+-n, and C) p-n+, to examine their influence on the distributions of space charge, potential, electric field, minority charge carriers, and the I-U curve at 300 K. It can be seen from the results that in case A, the recombination process is not observed at a lower voltage in the symmetrical p-n junction compared to than case B and C asymmetrical p-n junction. The voltage-temperature characteristics of the prepared samples were then measured at a temperature of 300K. I-U curve at 300 K. Calibration of the Si p-n homojunction structures is performed using experimental data to validate the proposed model. With the help of this constructed complex model, the influence of various geometrical changes, such as the radial p-n transition, on electrophysical properties will be examined in our next work.