Advancing the Coupling of III–V Quantum Dots to Photonic Structures to Shape Their Emission Diagram

Abstract The development of optoelectronic devices based on III–V semiconductor colloidal quantum dots (CQDs) is highly sought after due to their reduced toxicity. While devices based on conventional CQDs (II–VI semiconductors, halide perovskites) have achieved impressive technological leaps since their discovery, the most mature of these compounds contain toxic heavy metal elements (Cd, Hg, or Pb), which are highly undesirable for safe industrial scale applications. The strong covalent bonds of III–V compounds like InP, InAs, or InSb prevent the release of their toxic atoms, making them safer. However, these same bonds create severe material constraints. Namely, their harsher reaction conditions and increased sensitivity to oxidation have kept most of the research focused on material development. Meanwhile, their integration into devices and their coupling to photonic structures lag behind. Here, the integration of InAs/ZnSe core‐shell CQDs is advanced. First, the material parameters necessary to design plasmonic gratings coupled to the CQDs are elucidated and those gratings are fabricated. Angle‐resolved spectroscopy shows that the plasmon modes successfully couple to the CQD layer's emission leading to a tunable directivity with a 15° linewidth. A 3‐fold increase of the PL signal is achieved at normal incidence, thus advancing toward the goal of efficient outcoupling in LEDs.

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Publication Details

Journal
Advanced Optical Materials
Published
2024-09-30
DOI
https://doi.org/10.1002/adom.202401601
Citations
3
Primary Topic
Quantum Dots Synthesis And Properties
Type
article
Field-Weighted Citation Impact
0.35

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Advancing the Coupling of III–V Quantum Dots to Photonic Structures to Shape Their Emission Diagram

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Advanced Optical Materials
Quantum Dots Synthesis And Properties
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Advancing the Coupling of III–V Quantum Dots to Photonic Structures to Shape Their Emission Diagram

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article en
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Abstract

Abstract The development of optoelectronic devices based on III–V semiconductor colloidal quantum dots (CQDs) is highly sought after due to their reduced toxicity. While devices based on conventional CQDs (II–VI semiconductors, halide perovskites) have achieved impressive technological leaps since their discovery, the most mature of these compounds contain toxic heavy metal elements (Cd, Hg, or Pb), which are highly undesirable for safe industrial scale applications. The strong covalent bonds of III–V compounds like InP, InAs, or InSb prevent the release of their toxic atoms, making them safer. However, these same bonds create severe material constraints. Namely, their harsher reaction conditions and increased sensitivity to oxidation have kept most of the research focused on material development. Meanwhile, their integration into devices and their coupling to photonic structures lag behind. Here, the integration of InAs/ZnSe core‐shell CQDs is advanced. First, the material parameters necessary to design plasmonic gratings coupled to the CQDs are elucidated and those gratings are fabricated. Angle‐resolved spectroscopy shows that the plasmon modes successfully couple to the CQD layer's emission leading to a tunable directivity with a 15° linewidth. A 3‐fold increase of the PL signal is achieved at normal incidence, thus advancing toward the goal of efficient outcoupling in LEDs.

Advanced Optical MaterialsVol. 12(33)
Centre National de la Recherche Scientifique (FR), Université Paris Cité (FR), Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), Synchrotron soleil (FR), CEA Grenoble (FR), Sorbonne Université (FR), Laboratoire Matériaux et Phénomènes Quantiques (FR), Institut des NanoSciences de Paris (FR), Université Grenoble Alpes (FR)
Agence Nationale de la Recherche, European Research Council
Industry, innovation and infrastructure
Openalex Percentile: Top 44%
Quantum Dots Synthesis And Properties
0.35
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