Molecular-Scale Geometric Design: Zigzag-Structured Intrinsically Stretchable Polymer Semiconductors

Orienting intelligence and multifunction, stretchable semiconductors are of great significance in constructing next-generation human-friendly wearable electronic devices. Nevertheless, rendering semiconducting polymers mechanical stretchability without compromising intrinsic electrical performance remains a major challenge. Combining geometry-innovated inorganic systems and structure-tailored organic semiconductors, a molecular-scale geometric design strategy is proposed to obtain high-performance intrinsically stretchable polymer semiconductors. Originating from the linear regioregular conjugated polymer and corresponding <i>para</i>-modified near-linear counterpart, a series of zigzag-structured semiconducting polymers are developed with diverse <i>ortho</i>-type and <i>meta</i>-type kinking units quantitatively incorporated. They showcase huge edges in realizing stretchability enhancement for conformational transition, likewise with long-range π-aggregation and short-range torsion disorder taking effect. Assisted by additional heteroatom embedment and flexible alkyl-chain attachment, mechanical stretchability and carrier mobility could afford a two-way promotion. Among zigzag-structured species, <i>o</i>-OC8-5% with the initial field-effect mobility up to 1.92 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> still delivers 1.43 and 1.37 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> under 100% strain with charge transport parallel and perpendicular to the stretching direction, respectively, accompanied by outstanding performance retention and cyclic stability. This molecular design strategy contributes to an in-depth exploration of prospective intrinsically stretchable semiconductors for cutting-edge electronic devices.

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Publication Details

Journal
Journal of the American Chemical Society
Published
2024-09-30
DOI
https://doi.org/10.1021/jacs.4c07174
Citations
19
Primary Topic
Advanced Sensor and Energy Harvesting Materials
Type
article
Field-Weighted Citation Impact
3.50

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article

Molecular-Scale Geometric Design: Zigzag-Structured Intrinsically Stretchable Polymer Semiconductors

Yunlong Guo, Zhihao Shao, Zihan Xiong, Wenkang Shi et al.
19 citations
Journal of the American Chemical Society
Advanced Sensor and Energy Harvesting Materials
3.50
article

Molecular-Scale Geometric Design: Zigzag-Structured Intrinsically Stretchable Polymer Semiconductors

Yunlong Guo, Zhihao Shao, Zihan Xiong, Wenkang Shi, Yangshuang Bian, Yifan Li, Zhiyuan Zhao, Yunqi Liu, Jinyang Chen, Yang Zhao, Mingliang Zhu, Cheng-Yu Wang
article en
19 citations

Abstract

Orienting intelligence and multifunction, stretchable semiconductors are of great significance in constructing next-generation human-friendly wearable electronic devices. Nevertheless, rendering semiconducting polymers mechanical stretchability without compromising intrinsic electrical performance remains a major challenge. Combining geometry-innovated inorganic systems and structure-tailored organic semiconductors, a molecular-scale geometric design strategy is proposed to obtain high-performance intrinsically stretchable polymer semiconductors. Originating from the linear regioregular conjugated polymer and corresponding <i>para</i>-modified near-linear counterpart, a series of zigzag-structured semiconducting polymers are developed with diverse <i>ortho</i>-type and <i>meta</i>-type kinking units quantitatively incorporated. They showcase huge edges in realizing stretchability enhancement for conformational transition, likewise with long-range π-aggregation and short-range torsion disorder taking effect. Assisted by additional heteroatom embedment and flexible alkyl-chain attachment, mechanical stretchability and carrier mobility could afford a two-way promotion. Among zigzag-structured species, <i>o</i>-OC8-5% with the initial field-effect mobility up to 1.92 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> still delivers 1.43 and 1.37 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> under 100% strain with charge transport parallel and perpendicular to the stretching direction, respectively, accompanied by outstanding performance retention and cyclic stability. This molecular design strategy contributes to an in-depth exploration of prospective intrinsically stretchable semiconductors for cutting-edge electronic devices.

Journal of the American Chemical SocietyVol. 146(40)
Chinese Academy of Sciences (CN), Beijing National Laboratory for Molecular Sciences (CN), Institute of Chemistry (CN), University of Chinese Academy of Sciences (CN)
National Natural Science Foundation of China, Chinese Academy of Sciences, Beijing Nova Program, National Key Research and Development Program of China
Openalex Percentile: Top 7%
Advanced Sensor and Energy Harvesting Materials
3.50
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