Characterization of ZnSe Thin Film Electrodeposited at Room Temperature in Aqueous Medium without Complexing Agents

This study includes a simple electrodeposition technique for the fabrication of ZnSe thin film at room temperature and in an aqueous medium without additional complexing agents. Comprehensive analysis of the optical, structural, and morphological characteristics of the ZnSe thin film electrodeposited onto an ITO substrate was conducted using UV-Vis spectrometry, X-ray diffraction (XRD), Raman spectroscopy, Fourier transform infrared spectroscopy (FT-IR), and field emission–scanning electron microscopy (FE–SEM). Furthermore, the photoelectrochemical properties were evaluated through current-time (I-t) measurements and electrochemical impedance spectroscopy (EIS) under light on/off conditions. Mott-Schottky analysis was also performed to determine the conductivity type, carrier concentration, and flat band potential of the ZnSe thin film. Structural investigations revealed that the ZnSe thin film has a hexagonal structure, the longitudinal optical (LO) phonon mode, stretching and bending vibration modes of Zn-Se. The carrier type of the ZnSe thin film was identified as n- type semiconductor and photoelectrochemical measurements exhibited a photoresponse under the light illumination