Fabrication of Electrospun Porous TiO2 Dielectric Film in a Ti–TiO2–Si Heterostructure for Metal–Insulator–Semiconductor Capacitors

The development of metal-insulator-semiconductor (MIS) capacitors requires device miniaturization and excellent electrical properties. Traditional SiO₂ gate dielectrics have reached their physical limits. In this context, high-k materials such as TiO₂ are emerging as promising alternatives to SiO₂. However, the deposition of dielectric layers in MIS capacitors typically requires high-vacuum equipment and challenging processing conditions. Therefore, in this study, we present a new method to effectively fabricate a poly(vinylidene fluoride) (PVDF)-based TiO₂ dielectric layer via electrospinning. Nano-microscale layers were formed via electrospinning by applying a high voltage to a polymer solution, and electrical properties were analyzed as a function of the TiO₂ crystalline phase and residual amount of PVDF at different annealing temperatures. Improved electrical properties were observed with increasing TiO₂ anatase content, and the residual amount of PVDF decreased with increasing annealing temperature. The sample annealed at 600 °C showed a lower leakage current than those annealed at 300 and 450 °C, with a leakage current density of 7.5 × 10^-13 A/cm² when Vg = 0 V. Thus, electrospinning-based coating is a cost-effective method to fabricate dielectric thin films. Further studies will show that it is flexible and dielectric tunable, thus contributing to improve the performance of next-generation electronic devices.