Analytical study of power generation gain of N and P type modules

Combined with the local climatic conditions in Hainan, the theoretical data simulated using PVsyst software is compared with the data of the empirical project. Under the irradiation value and temperature conditions, the power generation of different models of modules is analyzed, and the experimental results obtained from the simulation of PVsyst software show that: for different models of double-sided double-glazed photovoltaic modules, under the same conditions, the Ntype modules, compared with the P-type modules, have an annual power generation gain of 5.1%. The simulation data (5.1%) is similar to the power plant operation data (5.2%), which is supportive of the theoretical experimental results.

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Publication Details

Published
2024-09-30
DOI
https://doi.org/10.1117/12.3045210
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
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Analytical study of power generation gain of N and P type modules

Qiuluan Chen, Haiqiang Liu, Wenchao Lin, Yingzhi Han et al.
Silicon Carbide Semiconductor Technologies
article

Analytical study of power generation gain of N and P type modules

Qiuluan Chen, Haiqiang Liu, Wenchao Lin, Yingzhi Han, Xueying Fu
article en

Abstract

Combined with the local climatic conditions in Hainan, the theoretical data simulated using PVsyst software is compared with the data of the empirical project. Under the irradiation value and temperature conditions, the power generation of different models of modules is analyzed, and the experimental results obtained from the simulation of PVsyst software show that: for different models of double-sided double-glazed photovoltaic modules, under the same conditions, the Ntype modules, compared with the P-type modules, have an annual power generation gain of 5.1%. The simulation data (5.1%) is similar to the power plant operation data (5.2%), which is supportive of the theoretical experimental results.

PowerChina (China) (CN)
Affordable and clean energy
Openalex Percentile: Top 86%
Silicon Carbide Semiconductor Technologies
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