Study on the influence of uneven temperature between multiple chips on the short-circuit operation of new power IGBT module

The new power IGBT module is widely used in new application scenarios such as high voltage and high frequency, which is an important research direction of the development of information science. In this paper, the influence of uneven temperature between multiple chips on the short-circuit operation of IGBT module is analyzed, a three-dimensional model is established and analyzed by finite element method. After creating the temperature condition of uneven temperature distribution caused by the degradation of some heat dissipation conditions, the temperature distribution and heat flux distribution of IGBT module under this temperature condition are simulated, This paper analyzes the influence of uneven temperature between multiple chips in IGBT module on the short-circuit operation of IGBT module, and puts forward some reliability suggestions for the wide application of IGBT in high-frequency and high-voltage occasions.