Research on the influence of illumination on the leakage current of silicon drift detectors

The silicon drift detector, known for its high resolution and low noise as a semiconductor detector, is extensively utilized in fields like X-ray spectroscopy analysis and particle energy detection. The performance of the detector is directly impacted by the magnitude of its leakage current. Illumination is one of the significant factors affecting the leakage current in silicon drift detectors. This work designs a 1000um×300um concentric silicon drift detector, employs Sentaurus TCAD to analyze the potential distribution within the SDD, and methodically investigates the impact of factors including light intensity, wavelength, and angle of incidence on the SDD's leakage current. Additionally, the study analyzes the detector's light pulse response and examines the physical mechanisms underlying the detector's light response, offering a theoretical foundation for further optimizing the detector's design and enhancing its performance.