A Comprehensive Framework for the Self-Heat Enhanced BTI and HCD Isolation
Contributions due to bias temperature instability (BTI) and hot carrier degradation (HCD) in the presence of self-heating (SH) on parametric shift are analyzed in gate-all-around stacked nanosheet (GAA-SNS) p- and n-FETs. The BTI analysis tool (BAT) models the time kinetics of pure BTI during and after stress at different gate bias (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V} _{\text {G}}$ </tex-math></inline-formula>) and temperature (T), and changes in the presence of drain bias (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V} _{\text {D}}$ </tex-math></inline-formula>) due to a reduction in vertical field (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E} _{\text {VRT}}$ </tex-math></inline-formula>) and lattice T increase due to SH. The HCD analysis tool (HCAT) models the time kinetics of pure HCD during and after stress at different <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V} _{\text {G}}$ </tex-math></inline-formula>, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V} _{\text {D}}$ </tex-math></inline-formula>, and T. The decoupling methodology helps isolate and project BTI and pure HCD contributions to overall HCD at end of life (EOL) at different <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V} _{\text {G}}$ </tex-math></inline-formula>, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V} _{\text {D}}$ </tex-math></inline-formula>, and T. Comparison is made to blanket HCD projection to EOL without decomposition of BTI.
Authors
- Arnav Shaurya Bisht (ORCID: https://orcid.org/0009-0000-6485-8397)
- Souvik Mahapatra (ORCID: https://orcid.org/0000-0002-4516-766X)
- Rashmi Saikia (ORCID: https://orcid.org/0000-0001-8142-4355)
- Nilotpal Choudhury (ORCID: https://orcid.org/0000-0001-6430-0174)
Institutions
- Indian Institute of Technology Bombay (IN)
Publication Details
- Journal
- IEEE Transactions on Electron Devices
- Published
- 2024-09-30
- DOI
- https://doi.org/10.1109/ted.2024.3459867
- Citations
- 4
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.83