A Comprehensive Framework for the Self-Heat Enhanced BTI and HCD Isolation

Contributions due to bias temperature instability (BTI) and hot carrier degradation (HCD) in the presence of self-heating (SH) on parametric shift are analyzed in gate-all-around stacked nanosheet (GAA-SNS) p- and n-FETs. The BTI analysis tool (BAT) models the time kinetics of pure BTI during and after stress at different gate bias (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V} _{\text {G}}$ </tex-math></inline-formula>) and temperature (T), and changes in the presence of drain bias (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V} _{\text {D}}$ </tex-math></inline-formula>) due to a reduction in vertical field (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E} _{\text {VRT}}$ </tex-math></inline-formula>) and lattice T increase due to SH. The HCD analysis tool (HCAT) models the time kinetics of pure HCD during and after stress at different <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V} _{\text {G}}$ </tex-math></inline-formula>, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V} _{\text {D}}$ </tex-math></inline-formula>, and T. The decoupling methodology helps isolate and project BTI and pure HCD contributions to overall HCD at end of life (EOL) at different <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V} _{\text {G}}$ </tex-math></inline-formula>, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V} _{\text {D}}$ </tex-math></inline-formula>, and T. Comparison is made to blanket HCD projection to EOL without decomposition of BTI.

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Publication Details

Journal
IEEE Transactions on Electron Devices
Published
2024-09-30
DOI
https://doi.org/10.1109/ted.2024.3459867
Citations
4
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.83
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article

A Comprehensive Framework for the Self-Heat Enhanced BTI and HCD Isolation

Arnav Shaurya Bisht, Souvik Mahapatra, Rashmi Saikia, Nilotpal Choudhury
4 citations
IEEE Transactions on Electron Devices
Semiconductor materials and devices
0.83
article

A Comprehensive Framework for the Self-Heat Enhanced BTI and HCD Isolation

Arnav Shaurya Bisht, Souvik Mahapatra, Rashmi Saikia, Nilotpal Choudhury
article en
4 citations

Abstract

Contributions due to bias temperature instability (BTI) and hot carrier degradation (HCD) in the presence of self-heating (SH) on parametric shift are analyzed in gate-all-around stacked nanosheet (GAA-SNS) p- and n-FETs. The BTI analysis tool (BAT) models the time kinetics of pure BTI during and after stress at different gate bias (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V} _{\text {G}}$ </tex-math></inline-formula>) and temperature (T), and changes in the presence of drain bias (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V} _{\text {D}}$ </tex-math></inline-formula>) due to a reduction in vertical field (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E} _{\text {VRT}}$ </tex-math></inline-formula>) and lattice T increase due to SH. The HCD analysis tool (HCAT) models the time kinetics of pure HCD during and after stress at different <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V} _{\text {G}}$ </tex-math></inline-formula>, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V} _{\text {D}}$ </tex-math></inline-formula>, and T. The decoupling methodology helps isolate and project BTI and pure HCD contributions to overall HCD at end of life (EOL) at different <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V} _{\text {G}}$ </tex-math></inline-formula>, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V} _{\text {D}}$ </tex-math></inline-formula>, and T. Comparison is made to blanket HCD projection to EOL without decomposition of BTI.

IEEE Transactions on Electron DevicesVol. 71(11)
Indian Institute of Technology Bombay (IN)
Affordable and clean energy
Openalex Percentile: Top 27%
Semiconductor materials and devices
0.83
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