Hetero-Integrated InP RTD-SiGe BiCMOS Source With Fundamental Injection Locking
This work shows the hetero-integration of an InP resonant tunneling diode (RTD) on a SiGe-BiCMOS mm-Wave integrated circuit (MMIC) for near-field wireless fundamental injection locking. We observe injection locking within a locking range of 26 GHz and a total power during injection locking of −3.4 dBm. The SiGe-based local oscillator (LO) is integrated with a frequency doubler and an on-chip patch antenna that operates between 220 and 247 GHz, providing a maximum output power of −7 dBm. The LO is near-field coupled to an InP RTD oscillator integrated into a slot antenna which reaches a free running maximum output power of −6.2 dBm. The chip-to-chip integration is carried out through flip-chip bonding.
Authors
- Andreas Rennings (ORCID: https://orcid.org/0000-0003-4606-3712)
- Nils Pohl (ORCID: https://orcid.org/0000-0001-5362-638X)
- Daniel Erni (ORCID: https://orcid.org/0000-0002-1467-6373)
- Benedikt Sievert (ORCID: https://orcid.org/0000-0002-4842-932X)
- Florian Vogelsang (ORCID: https://orcid.org/0000-0002-7508-4769)
- Nils Weimann (ORCID: https://orcid.org/0000-0001-6665-9949)
- Robin Kress (ORCID: https://orcid.org/0000-0003-1817-0553)
- Enes Mutlu (ORCID: https://orcid.org/0000-0002-9616-6851)
- Jonas Watermann (ORCID: https://orcid.org/0000-0001-5302-1735)
- Jonathan Abts (ORCID: https://orcid.org/0009-0009-0092-7598)
- Christian Preuss (ORCID: https://orcid.org/0009-0003-9837-0746)
- J. F. Bott
Institutions
- Fraunhofer Institute for High Frequency Physics and Radar Techniques (DE)
- University of Duisburg-Essen (DE)
- Ruhr University Bochum (DE)
Publication Details
- Journal
- IEEE Microwave and Wireless Technology Letters
- Published
- 2024-09-30
- DOI
- https://doi.org/10.1109/lmwt.2024.3458196
- Citations
- 2
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.42