A D-Band Self-Packaged Low Loss Grounded Coplanar Waveguide to Rectangular Waveguide Transition With Silicon-Based Air Cavity-Backed Structure

A novel D-band self-packaged silicon-based air cavity-backed transition from grounded coplanar waveguide to air-filled rectangular waveguide was investigated, fabricated, and measured in this work. The equivalent circuit model was established and analyzed in detail, and design procedures are given. The calculated, simulated, and measured S-parameters of the transition show some agreement. The minimum measured insertion loss of the proposed transition is 1.1 dB at 147 GHz with a fractional 3-dB bandwidth of 10.2%. This transition demonstrates outstanding performance of low loss and profile compared with state-of-the art works in our in-house silicon-based MEMS photosensitive composite film fabrication process. It can be further used in a high-performance joint radar communication system in packaging.

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Publication Details

Journal
IEEE Journal of Microwaves
Published
2024-09-30
DOI
https://doi.org/10.1109/jmw.2024.3459909
Citations
4
Primary Topic
Microwave Engineering and Waveguides
Type
article
Field-Weighted Citation Impact
0.83

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article

A D-Band Self-Packaged Low Loss Grounded Coplanar Waveguide to Rectangular Waveguide Transition With Silicon-Based Air Cavity-Backed Structure

Liang Zhou, Yin-Shan Huang, Cheng-Rui Zhang, Zi-Qi Zhang et al.
4 citations
IEEE Journal of Microwaves
Microwave Engineering and Waveguides
0.83
article

A D-Band Self-Packaged Low Loss Grounded Coplanar Waveguide to Rectangular Waveguide Transition With Silicon-Based Air Cavity-Backed Structure

Liang Zhou, Yin-Shan Huang, Cheng-Rui Zhang, Zi-Qi Zhang, Xiaolong Huang
article en
4 citations

Abstract

A novel D-band self-packaged silicon-based air cavity-backed transition from grounded coplanar waveguide to air-filled rectangular waveguide was investigated, fabricated, and measured in this work. The equivalent circuit model was established and analyzed in detail, and design procedures are given. The calculated, simulated, and measured S-parameters of the transition show some agreement. The minimum measured insertion loss of the proposed transition is 1.1 dB at 147 GHz with a fractional 3-dB bandwidth of 10.2%. This transition demonstrates outstanding performance of low loss and profile compared with state-of-the art works in our in-house silicon-based MEMS photosensitive composite film fabrication process. It can be further used in a high-performance joint radar communication system in packaging.

IEEE Journal of MicrowavesVol. 4(4)
Shanghai Jiao Tong University (CN), Princeton University (US)
National Natural Science Foundation of China
Openalex Percentile: Top 27%
Microwave Engineering and Waveguides
0.83
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