Correlations of interface charge accumulation and device characteristics studied by DCM-PL technique

Spontaneous orientation polarization (SOP) results in excess charge accumulation at the interfaces within OLEDs. The excess charge accumulation leads to significant exciton-polaron quenching (EPQ) and correlates to the device degradation. While SOP is observed in various OLED materials, the optimized SOP configuration remains not well understood. In this study, we demonstrated the correlations of the interface charge accumulation and device characteristics, particularly focusing on EPQ and device degradation, by the simultaneous measurement technique of displacement current and photoluminescence intensity (DCM-PL).

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Published
2024-09-30
DOI
https://doi.org/10.1117/12.3027233
Primary Topic
Semiconductor materials and devices
Type
article
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article

Correlations of interface charge accumulation and device characteristics studied by DCM-PL technique

Yutaka Noguchi, Alexander Hofmann, Mihiro Takeda, S Nakano et al.
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Semiconductor materials and devices
article

Correlations of interface charge accumulation and device characteristics studied by DCM-PL technique

Yutaka Noguchi, Alexander Hofmann, Mihiro Takeda, S Nakano, Wolfgang Bruetting
article en

Abstract

Spontaneous orientation polarization (SOP) results in excess charge accumulation at the interfaces within OLEDs. The excess charge accumulation leads to significant exciton-polaron quenching (EPQ) and correlates to the device degradation. While SOP is observed in various OLED materials, the optimized SOP configuration remains not well understood. In this study, we demonstrated the correlations of the interface charge accumulation and device characteristics, particularly focusing on EPQ and device degradation, by the simultaneous measurement technique of displacement current and photoluminescence intensity (DCM-PL).

Meiji University (JP), University of Augsburg (DE)
Affordable and clean energy
Openalex Percentile: Top 86%
Semiconductor materials and devices
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Correlations of interface charge accumulation and device characteristics studied by DCM-PL technique — Yutaka Noguchi, Alexander Hofmann, et al. · (2024) | TGRS Research Map | TGRS