Impact of device architecture on polarization-induced charge accumulation and exciton quenching in OLEDs

Spontaneous orientation polarization (SOP) can lead to interfacial charge accumulation and exciton-polaron quenching in OLEDs. Well-considered is the case of electron-transport layer (ETL) SOP which results in accumulation at the emissive layer (EML)-ETL interface. This work considers two device architecture driven approaches to engineer accumulation and reduce quenching. First, the impact of EML SOP is considered using a polar host material. Second, addition of a blocking layer at the hole-transport layer-EML interface is demonstrated as a means to tune charge accumulation. These results underscore the importance of SOP in OLEDs while offering architecture-based methods for altering associated charge dynamics.