Organic permeable base transistors with floating-base for multistate non-volatile memories

Organic Permeable Base Transistors (OPBTs) are recognized for their exceptional performance, including high switching speeds and low operation voltages, while being fabricated through simple thermal vapor deposition using shadow masks. Our research demonstrates that OPBTs, augmented with an additional floating gate, can function as effective medium-term memory devices. Characteristics include a program voltage of +3V with a memory window of 0.7 V and a retention time of up to 10^5 seconds. Within this voltage range, the device functions as a multistate memory, further enhancing its efficiency as a low-power solution and neuromorphic potential.