Assessing defects, buried interfaces, and stability in metal halide perovskites

Understanding the chemical factors that dictate long term stability in metal halide perovskite thin films is critical in the optimization of fully commercialized printable energy conversion, display and optoelectronic platforms, X-ray detectors, and photodetectors. The origin of these instabilities has been associated with defects within the perovskite crystal lattice. This talk will discuss established (spectro)electrochemistry-based measurement science approaches to quantify the distribution and energetics of donor and acceptor defects in prototypical perovskite solar cell materials and at buried charge selective interlayers (i.e., hole transport layers). Connections to device performance, benchmarked with time-resolved photoluminescence measurements, will be shown. Results demonstrating the connection between defect quantification and durability will also be discussed in the context of activated corrosion of metal halide perovskites, as probed by dynamic near-ambient pressure X-ray photoelectron spectroscopy.