Improving process window and resolution through source polarization in High-NA EUV

The effect of polarized illumination in enhancing pattern fidelity and resolution in high NA EUV is examined. The influence of polarization on two key performance metrics: NILS and nDOF is systematically analyzed. As is known, polarized illumination significantly improves both metrics, leading to better resolution and the process window overall imaging performance in high NA EUV, where maintaining high resolution and image quality is particularly challenging. Integrating polarization into source optimization proves to be highly effective, expanding the process window. The importance of polarized illumination is highlighted in overcoming the resolution limits of high NA EUV lithography, making it a key enabler for future advancements in semiconductor manufacturing.