Philippe Artillan (ORCID: https://orcid.org/0000-0001-8736-0129)
T. González (ORCID: https://orcid.org/0000-0002-3706-3211)
Institutions
Institut polytechnique de Grenoble (FR)
Centre National de la Recherche Scientifique (FR)
Universidad de Salamanca (ES)
Institut de Microélectronique, Electromagnétisme et Photonique (FR)
Université Savoie Mont Blanc (FR)
Publication Details
Journal
SPIRE - Sciences Po Institutional REpository
Published
2024-09-04
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00
Funders
Junta de Castilla y León
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article
Equivalent Circuit Model of RF Power Detection with AlGaN/GaN HEMTs up to 67 GHz
I. Íñiguez-de-la-Torre, J. Mateos, Sergio García-Sánchez, Gaudencio Paz-Martínez et al.
Journal
SPIRE - Sciences Po Institutional REpository
Topics
GaN-based semiconductor devices and materials
article
Equivalent Circuit Model of RF Power Detection with AlGaN/GaN HEMTs up to 67 GHz
I. Íñiguez-de-la-Torre, J. Mateos, Sergio García-Sánchez, Gaudencio Paz-Martínez, Philippe Artillan, T. González
article en
Abstract
No abstract available for this paper.
Publication Tag
SPIRE - Sciences Po Institutional REpository
Institutions
Institut polytechnique de Grenoble (FR), Centre National de la Recherche Scientifique (FR), Universidad de Salamanca (ES), Institut de Microélectronique, Electromagnétisme et Photonique (FR), Université Savoie Mont Blanc (FR)