Understanding and control of the formation of metallic nanoscale silicide contacts on vertical nanostructured channel for advanced 3D nanoelectronics devices: from Si to high mobility materials
Authors
Aurélie Lecestre
F. Cristiano (ORCID: https://orcid.org/0000-0003-1839-9972)
Jonas Müller (ORCID: https://orcid.org/0000-0002-8703-0872)
Nicolas Mallet
Institutions
Laboratoire d'Analyse et d'Architecture des Systèmes (FR)
Laboratoire des Technologies de la Microélectronique (FR)
Publication Details
Journal
SPIRE - Sciences Po Institutional REpository
Published
2024-09-16
Primary Topic
Semiconductor materials and interfaces
Type
article
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article
Understanding and control of the formation of metallic nanoscale silicide contacts on vertical nanostructured channel for advanced 3D nanoelectronics devices: from Si to high mobility materials
Aurélie Lecestre, F. Cristiano, Leonardo Cancellara, Guilhem Larrieu et al.
Journal
SPIRE - Sciences Po Institutional REpository
Topics
Semiconductor materials and interfaces
article
Understanding and control of the formation of metallic nanoscale silicide contacts on vertical nanostructured channel for advanced 3D nanoelectronics devices: from Si to high mobility materials
Aurélie Lecestre, F. Cristiano, Leonardo Cancellara, Guilhem Larrieu, Rémi Demoulin, Jonas Müller, Nicolas Mallet
article en
Abstract
No abstract available for this paper.
Publication Tag
SPIRE - Sciences Po Institutional REpository
Institutions
Laboratoire d'Analyse et d'Architecture des Systèmes (FR), Laboratoire des Technologies de la Microélectronique (FR)