Preliminary SiC MOSFET Gate-Cracking Modeling under Short-Circuit Based on Rankine's Damage Energetic Approach Using a Wide Temperature-Range Elastoplastic 2D Simulation [Abstract]
Authors
Mustafa Shqair (ORCID: https://orcid.org/0000-0002-2122-6039)
Université Fédérale de Toulouse Midi-Pyrénées (FR)
Institut National Polytechnique de Toulouse (FR)
Laboratoire Plasma et Conversion d'Energie (FR)
Publication Details
Journal
SPIRE - Sciences Po Institutional REpository
Published
2024-09-23
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
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article
Preliminary SiC MOSFET Gate-Cracking Modeling under Short-Circuit Based on Rankine's Damage Energetic Approach Using a Wide Temperature-Range Elastoplastic 2D Simulation [Abstract]
Mustafa Shqair, Frédéric Richardeau, Emmanuel Sarraute
Journal
SPIRE - Sciences Po Institutional REpository
Topics
Silicon Carbide Semiconductor Technologies
article
Preliminary SiC MOSFET Gate-Cracking Modeling under Short-Circuit Based on Rankine's Damage Energetic Approach Using a Wide Temperature-Range Elastoplastic 2D Simulation [Abstract]
Mustafa Shqair, Frédéric Richardeau, Emmanuel Sarraute
article en
Abstract
No abstract available for this paper.
Publication Tag
SPIRE - Sciences Po Institutional REpository
Institutions
Centre National de la Recherche Scientifique (FR), Université Toulouse III - Paul Sabatier (FR), Université Fédérale de Toulouse Midi-Pyrénées (FR), Institut National Polytechnique de Toulouse (FR), Laboratoire Plasma et Conversion d'Energie (FR)