Low-Voltage Schottky p-GaN HEMT Properties under Extreme Repetitive Short-Circuit Operation Conditions : 2DEG Pinch-off, Stability, Aging, Robustness and Failure-Modes Analysis [Abstract]

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SPIRE - Sciences Po Institutional REpository
Published
2024-09-23
Primary Topic
GaN-based semiconductor devices and materials
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article
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article

Low-Voltage Schottky p-GaN HEMT Properties under Extreme Repetitive Short-Circuit Operation Conditions : 2DEG Pinch-off, Stability, Aging, Robustness and Failure-Modes Analysis [Abstract]

David Trémouilles, Sébastien Vinnac, Lucien Ghizzo, Frédéric Richardeau
SPIRE - Sciences Po Institutional REpository
GaN-based semiconductor devices and materials
article

Low-Voltage Schottky p-GaN HEMT Properties under Extreme Repetitive Short-Circuit Operation Conditions : 2DEG Pinch-off, Stability, Aging, Robustness and Failure-Modes Analysis [Abstract]

David Trémouilles, Sébastien Vinnac, Lucien Ghizzo, Frédéric Richardeau
article en

Abstract

No abstract available for this paper.
SPIRE - Sciences Po Institutional REpository
Laboratoire d'Analyse et d'Architecture des Systèmes (FR), Laboratoire Plasma et Conversion d'Energie (FR), Thales (France) (FR)
Affordable and clean energy
Openalex Percentile: Top 90%
GaN-based semiconductor devices and materials
Open Access PDFOpenAlex
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