Ultrathin Ga<sub>2</sub>O<sub>3</sub> Photodetector with Fast Response and Trajectory Tracking Capability Fabricated by Liquid Metal Oxidation

Low-dimensional Ga<sub>2</sub>O<sub>3</sub> demonstrates a unique ultraviolet photoresponse and could be used in various electronic and optical systems. However, the low-dimensional Ga<sub>2</sub>O<sub>3</sub> photodetector is faced with the challenges of a complex preparation process and poor device performance. In this work, ultrathin Ga<sub>2</sub>O<sub>3</sub> layers with ∼7 nm thickness are prepared on quartz rods by UV exposure to liquid gallium. Benefiting from low-density oxygen vacancy defects cured by UV exposure, the low-dimensional Ga<sub>2</sub>O<sub>3</sub> photodetector exhibits a high response speed (rise: 64.7 μs; fall: 51.4 μs) and an exceptional linear dynamic range of 120 dB. Furthermore, the photodetector array based on these ultrathin Ga<sub>2</sub>O<sub>3</sub> shows an effective trajectory tracking capability by monitoring UV source motion. This work develops a simple preparation method to construct a low-dimensional UV photodetector array with fast response and useful trajectory tracking capability, exhibiting the significance of ultrathin Ga<sub>2</sub>O<sub>3</sub> in UV optoelectronics.

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Institutions

Publication Details

Journal
Nano Letters
Published
2024-09-28
DOI
https://doi.org/10.1021/acs.nanolett.4c04030
Citations
26
Primary Topic
Ga2O3 and related materials
Type
article
Field-Weighted Citation Impact
3.07

Funders

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article

Ultrathin Ga2O3 Photodetector with Fast Response and Trajectory Tracking Capability Fabricated by Liquid Metal Oxidation

Shibing Long, Weiheng Zhong, Hong Huang, Wei Xin et al.
26 citations
Nano Letters
Ga2O3 and related materials
3.07
article

Ultrathin Ga2O3 Photodetector with Fast Response and Trajectory Tracking Capability Fabricated by Liquid Metal Oxidation

Shibing Long, Weiheng Zhong, Hong Huang, Wei Xin, Yuqing Liu, Zhaojie Sun, Haiyang Xu, Xiaolong Zhao, Weizhen Yao Xianglin Liu
article en
26 citations

Abstract

Low-dimensional Ga<sub>2</sub>O<sub>3</sub> demonstrates a unique ultraviolet photoresponse and could be used in various electronic and optical systems. However, the low-dimensional Ga<sub>2</sub>O<sub>3</sub> photodetector is faced with the challenges of a complex preparation process and poor device performance. In this work, ultrathin Ga<sub>2</sub>O<sub>3</sub> layers with ∼7 nm thickness are prepared on quartz rods by UV exposure to liquid gallium. Benefiting from low-density oxygen vacancy defects cured by UV exposure, the low-dimensional Ga<sub>2</sub>O<sub>3</sub> photodetector exhibits a high response speed (rise: 64.7 μs; fall: 51.4 μs) and an exceptional linear dynamic range of 120 dB. Furthermore, the photodetector array based on these ultrathin Ga<sub>2</sub>O<sub>3</sub> shows an effective trajectory tracking capability by monitoring UV source motion. This work develops a simple preparation method to construct a low-dimensional UV photodetector array with fast response and useful trajectory tracking capability, exhibiting the significance of ultrathin Ga<sub>2</sub>O<sub>3</sub> in UV optoelectronics.

Nano LettersVol. 24(43)
University of Science and Technology of China (CN), Northeast Normal University (CN), Ministry of Education (ET)
National Natural Science Foundation of China, University of Science and Technology of China, National Key Research and Development Program of China, Jilin Scientific and Technological Development Program, National Science Fund for Distinguished Young Scholars
Openalex Percentile: Top 7%
Ga2O3 and related materials
3.07
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