Analyzing Work Function Dependency for Doping Variations in Double Gate Junction Less Field Effect Transistor: A TCAD Simulation Perception

In this investigation, we present effect of work function on variation of electrical performance of conventional Double Gate Junctionless Field Effect Transistor (DGJLFET) for various range of doping profiles. By using TCAD simulator, the impact of doping concentrations spanning from 1010 cm-3 to 1019 cm-3 and work functions of 5.0 eV, 5.2 eV, and 5.4 eV is comprehensively explored. In this work the electrical parameters including threshold voltage, On Current, Off Current, On Current to Off Current ratio, and Subthreshold Swings are analyzed for each work function setting. Results indicate an interrelationship between higher doping levels and increased On Current, alongside a reduction in Subthreshold Swing. Notably, at a work function of 5.4 eV and a doping concentration of 1019 cm-3 threshold voltage obtained is 0.71 V, ION/IOFF is 3.75 and Subthreshold Swing is 75 mV/decade are accomplished demonstrating the potential for optimized transistor performance through work function engineering.