Improved Nonlinear Self-Heating Compact Modeling in SiGe HBTs Using Mextram

The linear and nonlinear SH models in the latest versions of Mextram are evaluated, with an emphasis on high-power biases and ambient temperature scalability. The Mextram nonlinear SH model is shown to have limitations in fitting high-power regions at all temperatures. An investigation of the dynamic thermal resistance r TH reveals that it is only a function of T junc , which limits the fitting capability of the current nonlinear SH model. A new nonlinear SH model is proposed based on analysis of the r TH characteristics to improve high-power region fitting at multiple ambient temperatures. The model is demonstrated on a SiGe HBT from −25 ◦ C to 125 ◦ C.

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Publication Details

Journal
ECS Transactions
Published
2024-09-27
DOI
https://doi.org/10.1149/11402.0083ecst
Citations
1
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
Field-Weighted Citation Impact
0.21
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article

Improved Nonlinear Self-Heating Compact Modeling in SiGe HBTs Using Mextram

Marnix Willemsen, Yiao Li, A.J. Scholten, Guofu Niu et al.
1 citations
ECS Transactions
Advancements in Semiconductor Devices and Circuit Design
0.21
article

Improved Nonlinear Self-Heating Compact Modeling in SiGe HBTs Using Mextram

Marnix Willemsen, Yiao Li, A.J. Scholten, Guofu Niu, Anni Zhang
article en
1 citations

Abstract

The linear and nonlinear SH models in the latest versions of Mextram are evaluated, with an emphasis on high-power biases and ambient temperature scalability. The Mextram nonlinear SH model is shown to have limitations in fitting high-power regions at all temperatures. An investigation of the dynamic thermal resistance r TH reveals that it is only a function of T junc , which limits the fitting capability of the current nonlinear SH model. A new nonlinear SH model is proposed based on analysis of the r TH characteristics to improve high-power region fitting at multiple ambient temperatures. The model is demonstrated on a SiGe HBT from −25 ◦ C to 125 ◦ C.

ECS TransactionsVol. 114(2)
Openalex Percentile: Top 48%
Advancements in Semiconductor Devices and Circuit Design
0.21
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