Improved Nonlinear Self-Heating Compact Modeling in SiGe HBTs Using Mextram
The linear and nonlinear SH models in the latest versions of Mextram are evaluated, with an emphasis on high-power biases and ambient temperature scalability. The Mextram nonlinear SH model is shown to have limitations in fitting high-power regions at all temperatures. An investigation of the dynamic thermal resistance r TH reveals that it is only a function of T junc , which limits the fitting capability of the current nonlinear SH model. A new nonlinear SH model is proposed based on analysis of the r TH characteristics to improve high-power region fitting at multiple ambient temperatures. The model is demonstrated on a SiGe HBT from −25 ◦ C to 125 ◦ C.
Authors
- Marnix Willemsen
- Yiao Li (ORCID: https://orcid.org/0000-0002-4126-2678)
- A.J. Scholten (ORCID: https://orcid.org/0000-0003-1861-883X)
- Guofu Niu (ORCID: https://orcid.org/0000-0002-4102-2914)
- Anni Zhang
Publication Details
- Journal
- ECS Transactions
- Published
- 2024-09-27
- DOI
- https://doi.org/10.1149/11402.0083ecst
- Citations
- 1
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.21