Significant Changes in Electrical Resistance of Conductive Porous Silicon Films Produced from Thiol-Modified Silicon Nanoparticle Inks

Conductive porous Si films composed of Si nanoparticles were produced by depositing a thiol-modified Si nanoparticle ink and then sublimating the thiol-modification surface, leaving Si–S bonds on the surface. By exchanging atmospheric gas such as N 2 and O 2 , these S-terminated porous Si films reversibly changed electrical resistances in a dynamic range of five orders of magnitude, indicating that the resistance change was due to O 2 adsorption/desorption on the S-terminated surface.