Low Disorder and High Mobility 2DEG in Si/SiGe Fabricated in 200 mm BiCMOS Pilot line

Spin qubits based on quantum dots built on Si/SiGe heterostructures are a leading contender for achieving large-scale quantum computation. The quality of quantum dots fabricated on these heterostructures is directly connected to the quality of the 2D electron gas (2DEG) confined in the strained Silicon quantum well. The properties of such 2DEG can be readily assessed using Hall bar-shaped field-effect transistors (HB-FETs) and magneto-transport measurements, enabling a faster feedback loop for heterostructure optimization process. In this work, we present our recent progress in enabling silicon-based quantum computation by demonstrating fundamental components for 2DEG characterization, all developed in IHP's 200 mm BiCMOS pilot line. We demonstrate fully functional HB-FETs on Si/SiGe heterostructures grown on 200 mm silicon wafers, showcasing state-of-the-art 2DEG with maximum carrier mobility exceeding 300,000 cm²/Vs and a percolation threshold of 6.3×10 10 cm⁻². These results will help advance spin qubit research based on Si/SiGe heterostructures.