Native Oxidation of HgCdTe Compound Semiconductors and Its Impact on Infrared Detectors Performances

HgCdTe surface processing and exposition to the atmospheric environment promote the formation of surface oxides, which have been reported to influence the electrical behavior of devices. This work investigates the formation of HgCdTe of air native oxides on epitaxial Hg (1-x) Cd (x) Te layers after a standard wet etching procedure (x ≃ 0.2 to 0.7). Real-Time Spectroscopic Ellipsometry (RTSE) studies were performed to monitor initial native oxide formation in a clean-room environment and revealed a two-stage kinetic of oxide formation. X-ray Photoelectron Spectroscopy (XPS) was used to assess the evolution of the surface chemistry. After etching, the surfaces exhibited an excess of tellurium that oxidized during early oxide formation (< 45min). Longer air exposures resulted in oxide thicknesses correlated to the alloy composition, indicating a cadmium contribution to further oxidize the material. The combination of techniques allowed the investigation of the formation mechanisms surrounding the native oxide of wet-etched HgCdTe surfaces.