Developing the Metrology for Atomic Level Spatial Distribution and Local Chemistry Analysis of in-Situ Dopants By Atom Probe Tomography

We present a metrology for analyzing the spatial distribution and local chemistry of in-situ dopants using Atom Probe Tomography (APT). Our approach integrates a 'local composition method' with a Kolmogorov-Smirnov test on a 3D APT dataset to evaluate spatial inhomogeneity. This methodology was applied to a nanometer scale in-situ highly boron-doped silicon germanium layer. By subdividing the dopant-dopant local composition distribution into three, its influence on the localized chemical environment was determined. Our findings reveal an inhomogeneous spatial distribution for the dopant and the Si/Ge atoms. Our results demonstrate the potential for linking at an atomic-scale the epitaxial growth conditions of dopants and the matrix elements to a device performance.