Rate Equation for TiN Etching in Dilute H<sub>2</sub>O<sub>2</sub>

A rate equation for etching of TiN using hydrogen peroxide solution was proposed. TiN etching process could be modeled as a first order reaction by H 2 O 2 and HO 2 − concentration over pH range (0 - 9), suggesting that dissolution reaction is rate limiting step. Our finding is that HO 2 − reacts approximately 100 times faster than that of H 2 O 2 .

Authors

Publication Details

Journal
ECS Transactions
Published
2024-09-27
DOI
https://doi.org/10.1149/11401.0117ecst
Citations
1
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
0.21
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article

Rate Equation for TiN Etching in Dilute H2O2

Dai Ueda, Akiko Harumoto
1 citations
ECS Transactions
Advanced Memory and Neural Computing
0.21
article

Rate Equation for TiN Etching in Dilute H2O2

Dai Ueda, Akiko Harumoto
article en
1 citations

Abstract

A rate equation for etching of TiN using hydrogen peroxide solution was proposed. TiN etching process could be modeled as a first order reaction by H 2 O 2 and HO 2 − concentration over pH range (0 - 9), suggesting that dissolution reaction is rate limiting step. Our finding is that HO 2 − reacts approximately 100 times faster than that of H 2 O 2 .

ECS TransactionsVol. 114(1)
Openalex Percentile: Top 48%
Advanced Memory and Neural Computing
0.21
DOISourceOpenAlex
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Rate Equation for TiN Etching in Dilute H<sub>2</sub>O<sub>2</sub> — Dai Ueda, Akiko Harumoto · ECS Transactions (2024) | TGRS Research Map | TGRS