(Keynote) Epitaxial Si/SiGe Multi-Stacks: From Stacked Nano-Sheet to Fork-Sheet and CFET Devices
After a short description of the evolution of metal-oxide-semiconductor (MOS) device architectures and the corresponding requirements on epitaxial growth processes, the manuscript describes the material properties of complicated Si/SiGe multi-layer stacks used for complementary field effect transistor (CFET) devices. They contain two different Ge concentrations and have been grown using conventional process gases. A relatively high growth temperature is used to obtain acceptable Si and SiGe growth rates. Still island growth has been suppressed for Ge concentrations up to 40%. Excellent structural and optical material properties of the Si/SiGe multi-layer stack will be reported, with up to 3 + 3 Si channels in the top and bottom part of the stack, respectively. The absence/presence of lattice defects has been verified by room temperature photoluminescence measurements. Photoluminescence measurements at low temperatures are used to study band-to-band luminescence from individual sub-layers and to illustrate the optical material quality of the CFET stack.
Authors
- Olivier Richard (ORCID: https://orcid.org/0000-0001-8107-210X)
- Roger Loo (ORCID: https://orcid.org/0000-0003-3513-6058)
- Clément Porret (ORCID: https://orcid.org/0000-0002-4561-348X)
- Matteo Beggiato (ORCID: https://orcid.org/0000-0003-0873-9021)
- Hans Mertens (ORCID: https://orcid.org/0000-0002-3392-6892)
- Mustafa Ayyad (ORCID: https://orcid.org/0000-0003-2222-8295)
- Erik Rosseel (ORCID: https://orcid.org/0000-0002-2737-8391)
- Keisuke Yamamoto (ORCID: https://orcid.org/0000-0001-8730-598X)
- Andriy Hikavyy (ORCID: https://orcid.org/0000-0002-8201-075X)
- Andrea Impagnatiello (ORCID: https://orcid.org/0000-0002-0923-4642)
- Alex Merkulov
- Naoto Horiguchi (ORCID: https://orcid.org/0000-0001-5490-0416)
- Tamás Sipőcz
- Dong Wang (ORCID: https://orcid.org/0000-0003-0634-953X)
- Yosuke Shimura (ORCID: https://orcid.org/0000-0002-1944-9970)
- Thomas Dursap (ORCID: https://orcid.org/0009-0004-8907-4969)
- Árpád Kerekes
- Anjani Akula (ORCID: https://orcid.org/0009-0002-8111-1513)
- Han Han (ORCID: https://orcid.org/0000-0003-2169-8332)
- R. Langer (ORCID: https://orcid.org/0000-0002-1132-3468)
- Janusz Bogdanowicz (ORCID: https://orcid.org/0000-0002-7503-8922)
Publication Details
- Journal
- ECS Transactions
- Published
- 2024-09-27
- DOI
- https://doi.org/10.1149/11402.0015ecst
- Citations
- 1
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.21
Funders
- Agentschap Innoveren en Ondernemen
- European Commission
- Fonds Wetenschappelijk Onderzoek
- Electronic Components and Systems for European Leadership
- Japan Society for the Promotion of Science