Mathematical modeling of various CdTe/CISSe based hetero-structure photovoltaic cells incorporating Si and CdS: using Scaps 1D simulator

In this study, the primary focus was on enhancing the performance of Photovoltaic devices by modifying the ETL and HTL transport layers. We conducted a comprehensive analysis of efficiency and fill factor variations resulting from adjustments in key device parameters, notably the active layer` thickness. The HTL layer employed materials such as CdTe (Cadmium telluride) and CISSe (Copper indium sulfur selenide), while the ETL layer utilized CdS (Cadmium sulfide), ZnO (Zinc oxide), SnOx (Stannous oxalte), SnO2 (Tin oxide), and TiO2 (Titanium dioxide). Additionally, Silicon (Si) was incorporated into our structure. Our highest efficiency recorded was 27.38%, marking a significant achievement for our proposed cell design. In summary, our simulation results underscore the promising performance of the CdTe/CISSe/Si/CdS/ZnO structure, yielding an efficiency of 27.38%, an open-circuit voltage (Voc) of 0.8136V, a short-circuit current density (Jsc) of 41.17428 mA/cm2 , and a fill factor (FF) of 79.36%. The discussions presented herein suggest that our proposed Photovoltaic (PV) Solar Cell holds great potential for adequate performance and improved power conversion efficiency, making it a compelling choice for solar energy applications.