A macro model of spin-transfer torque magnetic tunnel junction

Abstract The precise compact modeling of magnetic devices is pivotal for the integrated design of spin-transfer torque magnetic tunnel junction (STT-MTJ) in conjunction with CMOS circuitry. This work presents a macro model for an STT-MTJ which is compatible with SPICE simulation platforms. The model accurately replicates the electrical performance of the MTJ, encompassing the resistance-voltage characteristics and the pulse-width-dependent state switching behavior, and is validated with various experimental data. Additionally, the impact of process variations, particularly those affecting the MTJ diameter and barrier thickness is investigated and summarized in a corner model. Monte Carlo simulations demonstrate that our adaptable and streamlined model can be efficiently incorporated into the design of integrated circuits.