Insights into the Structural Modification of Selenium-Doped Derivatives with Narrowband Emissions: A Theory Study

The research on boron/nitrogen (B/N)-based multiresonance thermally activated delayed fluorescence (MR-TADF) emitters has been a prominent topic due to their narrowband emission and high luminous efficiency. However, devices derived from the common types of narrowband TADF materials often experience an efficiency roll-off, which could be ascribed to their relatively slow triplet-singlet exciton interconversion. Since inserting the heavy Se atom into the B/N scheme has been a proven strategy to address the abovementioned issues, herein, extensive density functional theory (DFT) and time-dependent DFT (TD-DFT) simulations have been employed to explore the effects of the structural modification on a series of structurally modified selenium-doped derivatives. Furthermore, the two-layered ONIOM (QM/MM) model has been employed to study the pressure effects on the crystal structure and photophysical properties of the pristine CzBSe. The theoretical results found that the introduced tert-butyl units in Cz-BSeN could result in a shorter charge transfer distance and smaller reorganization energy than the parent CzBSe. In contrast to directly incorporating the <i>o</i>-carborane (<i>Cb</i>) unit to CzBSe, incorporating the bridged phenyl units is important in order to achieve narrowband emissions and high luminous efficiency. The lowest three triplet excited states of CzBSe, Cz-BSeN and PhCb-BSeN all contribute to their triplet-singlet exciton conversions, resulting in a high utilization of triplet excitons. The pressure has an evident influence on the photophysical properties of the aggregated CzBSe and is favored for obtaining narrowband emissions. Our work is promised to provide a feasible strategy for designing selenium-doped derivatives with narrowband emissions and rapid triplet-singlet exciton interconversions.