Structural parameters determination of ALD-SnO2 thin films grown on silicon (100) and boron-doped silicon (100) substrates

The present study describes the synthesis of SnO2 thin films achieved by the atomic layer deposition technique based on the reaction of tetrakis(dimethylamino)tin (Sn(NMe2)4 and H2O. The experiments were realized at 2.7 × 10-4 atm and 150 °C on silicon, or boron-doped silicon substrates. To characterize the physicochemical properties of the films, XRD was used to calculate the structural parameters of SnO2 thin films. Also, SEM, XPS, Raman, and UV-Vis spectroscopy techniques were used to understand the morphology, composition, and optical properties. The results indicate that the procedure presented here offers a viable alternative for fabricating high-quality SnO2 thin films that can be used in various technological fields, such as sensors, electronic, and optoelectronic devices.