GaN-Based Resonant-Cavity Light-Emitting Diode Towards a Vertical-Cavity Surface-Emitting Laser

The article reports the successful fabrication of GaN-based resonant cavity light-emitting diodes (RCLEDs) with nanoporous (NP) GaN/n-GaN distributed Bragg reflector (DBR). To realize the designed central wavelength and high reflectivity, the precise thickness control of NP GaN layer is extremely critical. By introducing the concept of space charge region in the thickness design of the n<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">++</sup>-GaN epitaxial growth for nanoporous GaN, accurate regulation of the centre wavelength of the NP GaN DBR reflection spectrum was achieved. Under light injection condition, longitudinal mode laser was observed at 438 nm, with a full width at half maximum (FWHM) of approximately 0.7 nm. Under electrical injection condition, the FWHM of the RCLED emission peak was about 3.4 nm.

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Publication Details

Journal
IEEE Journal of Selected Topics in Quantum Electronics
Published
2024-09-27
DOI
https://doi.org/10.1109/jstqe.2024.3469978
Citations
2
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
Field-Weighted Citation Impact
0.42
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article

GaN-Based Resonant-Cavity Light-Emitting Diode Towards a Vertical-Cavity Surface-Emitting Laser

Meixin Feng, Chuanjie Li, Gangyi Zhu, Hui Yang et al.
2 citations
IEEE Journal of Selected Topics in Quantum Electronics
Semiconductor Lasers and Optical Devices
0.42
article

GaN-Based Resonant-Cavity Light-Emitting Diode Towards a Vertical-Cavity Surface-Emitting Laser

Meixin Feng, Chuanjie Li, Gangyi Zhu, Hui Yang, Zhiwei Sun, Qian Sun, Jiaqi Liu, Wei Liu, Jianxun Liu, Shuming Zhang, Xiujian Sun
article en
2 citations

Abstract

The article reports the successful fabrication of GaN-based resonant cavity light-emitting diodes (RCLEDs) with nanoporous (NP) GaN/n-GaN distributed Bragg reflector (DBR). To realize the designed central wavelength and high reflectivity, the precise thickness control of NP GaN layer is extremely critical. By introducing the concept of space charge region in the thickness design of the n<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">++</sup>-GaN epitaxial growth for nanoporous GaN, accurate regulation of the centre wavelength of the NP GaN DBR reflection spectrum was achieved. Under light injection condition, longitudinal mode laser was observed at 438 nm, with a full width at half maximum (FWHM) of approximately 0.7 nm. Under electrical injection condition, the FWHM of the RCLED emission peak was about 3.4 nm.

IEEE Journal of Selected Topics in Quantum ElectronicsVol. 31(2: Pwr. and Effic. Scaling in)
University of Science and Technology of China (CN), ShanghaiTech University (CN), Nanjing University of Posts and Telecommunications (CN), Guangdong Institute of Intelligent Manufacturing (CN)
Affordable and clean energy
Openalex Percentile: Top 38%
Semiconductor Lasers and Optical Devices
0.42
DOISourceOpenAlex
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